?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet march 2007 superfet tm fcp16n60 / fcpf16n60 600v n-channel mosfet features ?650v @t j = 150 c ?typ. r ds(on) = 0.22 ? ultra low gate charge (typ. qg=55nc) ? low effective output capacitance (typ. coss.eff=110pf) ? 100% avalanche tested description superfet tm is, farichild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system miniaturization and higher efficiency. absolute maximum ratings thermal characteristics to-220 fcp series g s d to-220f fcpf series g s d d g s symbol parameter fcp16n60 fcpf16n60 unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 16 10.1 16* 10.1* a a i dm drain current - pulsed (note 1) 48 48* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 450 mj i ar avalanche current (note 1) 16 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 167 1.33 37.9 0.3 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter fcp16n60 fcpf16n60 unit r jc thermal resistance, junction-to-case 0.75 3.3 c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w *drain current limited by maximum junction temperature
2 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. i as = 8a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 16a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fcp16n60 fcp16n60 to-220 - - 50 fcpf16n60 fcpf16n60 to-220f - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0v, i d = 250 a, t j = 150 c -- 650 -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.6 -- v/ c bv dss drain-source avalanche breakdown voltage v gs = 0v, i d = 16a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 8a -- 0.22 0.26 g fs forward transconductance v ds = 40v, i d = 8a (note 4) -- 11.5 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1730 2250 pf c oss output capacitance -- 960 1150 pf c rss reverse transfer capacitance -- 85 -- pf c oss output capacitance v ds = 480v, v gs = 0v, f = 1.0mhz -- 45 60 pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 110 -- pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 16a r g = 25 (note 4, 5) -- 42 85 ns t r turn-on rise time -- 130 270 ns t d(off) turn-off delay time -- 165 340 ns t f turn-off fall time -- 90 190 ns q g total gate charge v ds = 480v, i d = 16a v gs = 10v (note 4, 5) -- 55 70 nc q gs gate-source charge -- 10.5 13 nc q gd gate-drain charge -- 28 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 16 a i sm maximum pulsed drain-source diode forward current -- -- 48 a v sd drain-source diode forward voltage v gs = 0v, i s =16a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 16a di f /dt =100a/ s (note 4) -- 435 -- ns q rr reverse recovery charge -- 7.0 -- c
3 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v *notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 0 10 1 10 2 *note: 1. v ds = 40v 2. 250 s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v gs = 20v v gs = 10v *note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 25 o c 150 o c *notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 480v *note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fcp16n60 for fcpf16n60 figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes : 1. v gs = 10 v 2. i d = 8 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 us operation in this area is limited by r ds(on) dc 1 ms 100 us *notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 ms 10 us operation in this area is limited by r ds(on) dc 1 ms 100 us *notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ c]
5 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet figure 11-1. transient thermal response curve (fcp16n60) figure 11-2. transient thermal response curve (fcpf16n60) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 *notes : 1. z jc (t) = 0.75 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 *notes : 1. z jc (t) = 3.3 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
6 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
7 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
8 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
9 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 to-220f dimensions in millimeters
10 www.fairchildsemi.com fcp16n60 / fcpf16n60 rev. b fcp16n60 / fcpf16n60 600v n-channel mosfet trademarks the following are registered and unregistered trademarks fair child semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make change s without further notice to any products herein to improve reliability, function or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit described he rein; neither does it co nvey any license under its patent rights, nor the rights of others. these specification s do not expand the terms of fairchild ?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life suppor t devices or systems without the express writte n approval of fairchild se miconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose fa ilure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expect ed to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this dat asheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contai ns preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time wit hout notice to improve design. no identification needed full production this datasheet c ontains final specificatio ns. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been dis- continued by fairchild semiconductor. the datasheet is printed for refer- ence information only. rev. i24 tm gto? powertrench ? tinybuck? tm
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